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The PDTA114EQB-Q is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an ultra-small DFN1110D-3 (SOT8015) leadless package with side-wettable flanks. It features built-in bias resistors of 10 kΩ each (R1 and R2). Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a continuous output current (IO) of -100 mA, and a total power dissipation (Ptot) of 340 mW on a 35 μm copper FR4 PCB. The device operates within a junction temperature range up to 150 °C and has a transition frequency (fT) of 180 MHz.
Verify the specific ordering suffix and reel quantity when purchasing. Confirm that the DFN1110D-3 footprint matches the target PCB layout. Ensure compliance with AEC-Q101 requirements if the application involves automotive systems. Check the latest datasheet revision for any updates to thermal or electrical characteristics before finalizing the bill of materials.
Select this component for designs requiring a compact PNP switching solution with integrated base biasing. The 10 kΩ resistor values are suitable for standard logic interface levels. Consider the low profile and side-wettable flanks for high-density assembly processes. Verify thermal performance against the derating curves provided in the datasheet for the specific PCB copper weight used.
This part belongs to the PDTA143/114/124/144EQB-Q series, which shares the same SOT8015 package but varies in internal resistor values. The NPN complement for this device is the PDTC114EQB-Q. The 'Q' suffix indicates qualification according to the AEC-Q101 standard for automotive use.
Direct substitutes within the same series include PDTA143EQB-Q, PDTA124EQB-Q, and PDTA144EQB-Q, though their internal resistor values differ. The NPN equivalent is PDTC114EQB-Q. Other packages like SOT23 or SOT323 require schematic and footprint redesigns.