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The PDTA114ET-QR is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an SOT23 surface-mount package. It integrates bias resistors R1 and R2, both nominally 10 kΩ, with a ratio tolerance of ±20%. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA. Key electrical characteristics include a DC current gain (hFE) of at least 30 at -5 mA, a saturation voltage (VCEsat) of -150 mV at -10 mA, and a transition frequency (fT) of 180 MHz. It operates within a junction temperature range up to 150 °C and is qualified under AEC-Q101 standards.
Verify the specific suffix 'QR' against the manufacturer's official documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the ordering code matches the required automotive qualification status and check for any regional distribution restrictions or lead time variations before finalizing procurement plans.
Select this component when a compact PNP switching solution with integrated base biasing is required. The built-in 10 kΩ resistors eliminate external components, reducing board space and assembly costs. Verify that the -50 V voltage rating and -100 mA current capability align with the target load requirements and operating conditions.
This part belongs to the PDTA series of PNP resistor-equipped transistors manufactured by Nexperia. It serves as the complement to the NPN PDTC114ET-Q. The 'Q' designation indicates AEC-Q101 qualification for automotive use, while the 'R' suffix typically denotes reel packaging for automated surface-mount assembly processes.
The NXP PDTA114ET-Q is a direct functional equivalent within the same family. For non-automotive contexts, the standard PDTA114ET may be considered if AEC-Q101 qualification is not required. Always verify pinout compatibility and thermal resistance values before substitution.