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The PDTA114ET,235 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. in a SOT23 surface-mount package. It integrates bias resistors R1 and R2, both nominally 10 kΩ, to simplify circuit design. Key electrical parameters include a collector-emitter voltage of -50 V, an output current capability of -100 mA, and a total power dissipation of 250 mW at 25 °C ambient temperature. The device features a DC current gain (hFE) of 30 at -5 mA/-5 V, a transition frequency of 180 MHz, and a collector-emitter saturation voltage of -150 mV at -10 mA/-0.5 mA.
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the product status aligns with current production requirements. Ensure compliance with RoHS directives and check for any relevant export control classifications applicable to your region prior to finalizing purchase orders.
Select this component when a compact PNP switching solution with integrated biasing is required. Verify that the -50 V collector-emitter voltage rating meets the application's maximum voltage stress. Ensure the -100 mA output current capability is sufficient for the intended load. Check thermal resistance requirements against the available PCB copper area for adequate heat dissipation.
This part belongs to the PDTA114 series of PNP resistor-equipped transistors. It serves as the PNP counterpart to the PDTC114ET NPN RET. The device is designed to replace discrete transistor and resistor combinations, offering a smaller footprint compared to using separate components on the printed-circuit board.
Direct replacements within the same family include other PDTA114 variants with different resistor values or packages. Cross-family alternatives may include similar PNP RETs from other manufacturers, provided pinouts, voltage ratings, and current capabilities are compatible.