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The PDTA114EU-Q is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. in an SOT323 (SC-70) surface-mount package. It integrates bias resistors R1 and R2, both typically 10 kΩ, to simplify circuit design. The device supports a collector-emitter voltage of -50 V and a continuous output current of -100 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 30 at -5 mA, a transition frequency of 180 MHz, and a total power dissipation of 200 mW at 25 °C ambient temperature. It operates within a junction temperature range up to 150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and manufacturing site codes. Confirm that the product status aligns with current production schedules before finalizing procurement plans. Ensure compliance with RoHS directives and check for any recent product change notices affecting specifications or supply chain logistics.
Select this component when a compact PNP transistor solution with built-in biasing is required for space-constrained designs. Consider the -50 V rating and -100 mA current capability for appropriate load switching tasks. Verify thermal management requirements based on the specified power dissipation limits and operating temperature ranges for the target application environment.
This part belongs to the PDTA114 series of resistor-equipped transistors from Nexperia. It serves as the PNP complement to the PDTC114EU NPN variant. The device is designed to replace discrete resistor-transistor combinations, offering a cost-saving alternative for digital logic interfaces and driver circuits in modern electronic systems.
PDTA114EU is a compatible equivalent part number within the same family.