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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SC70
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：180 MHz
- Power - Max：200 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70
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Overview
The PDTA114EU is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. in an SOT323 (SC-70) surface-mount package. It integrates bias resistors R1 and R2, both nominally 10 kΩ, to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a maximum output current (IO) of -100 mA, and a transition frequency (fT) of 180 MHz. The device operates within a junction temperature range of -65 °C to 150 °C and features a DC current gain (hFE) of at least 30.
Feature Summary
- Integrates built-in bias resistors to reduce component count and assembly costs
- Provides high breakdown voltage capability for robust digital switching
- Offers simplified circuit design through pre-biased configuration
Applications
- Digital applications in automotive and industrial segments
- Cost-saving alternative for BC847 series in digital applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and reel specifications. Confirm RoHS compliance status and ensure the product version matches the latest data sheet revision before finalizing procurement orders.
Selection Notes
Select this component when a compact PNP transistor with integrated base and emitter resistors is required. Ensure the application voltage does not exceed the -50 V collector-emitter rating and that the load current remains within the -100 mA limit. Verify thermal dissipation requirements against the specified power derating curve.
Part Context
This part belongs to the Nexperia PDTA114E series of PNP resistor-equipped transistors. The NPN complement for this device is the PDTC114EU. Both devices utilize the same SOT323 (SC-70) plastic surface-mounted package with three leads.
Replacement Considerations
The PDTC114EU serves as the NPN complement. For direct substitution in PNP circuits, verify pinout compatibility and electrical ratings against the target application requirements using official datasheets.
FAQ
What are the values of the built-in resistors?
The input bias resistor (R1) is 10 kΩ and the emitter-base resistor (R2) is 10 kΩ.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is -50 V.
What is the transition frequency of the device?
The typical transition frequency (fT) is 180 MHz under standard test conditions.
