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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT323
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：180 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
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Overview
The PDTA114EU,115 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates bias resistors within a compact SOT323 (SC-70) surface-mounted package. The device features a collector-emitter voltage (VCEO) of -50 V and an output current capability of -100 mA. Internal resistor values are specified as R1 = 10 kΩ and R2 = 10 kΩ. Key electrical characteristics include a DC current gain (hFE) of 30 at -5 mA, a transition frequency (fT) of 180 MHz, and a maximum power dissipation of 200 mW. The component operates within a junction temperature range up to 150 °C.
Feature Summary
- Integrates built-in bias resistors to simplify circuit design and reduce component count
- Provides high-speed switching performance with a transition frequency of 180 MHz
- Offers a compact SOT323 (SC-70) surface-mount package for space-constrained applications
Applications
- Digital applications in automotive and industrial segments
- Cost-saving alternative for BC847 series in digital applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when a PNP transistor with integrated base and emitter resistors is required for digital logic interfacing. The 10 kΩ internal resistance values are suitable for standard TTL and CMOS logic levels. Ensure the application voltage does not exceed the -50 V collector-emitter rating and that thermal management accommodates the 200 mW power dissipation limit in free air or on PCB.
Part Context
This part belongs to the PDTA114E series of PNP resistor-equipped transistors from Nexperia. It serves as the PNP counterpart to the PDTC114EU NPN RET. The series is designed to replace discrete BJT configurations, reducing board space and assembly costs while maintaining consistent electrical characteristics across manufacturing batches.
Replacement Considerations
The PDTC114EU is the complementary NPN version. For direct pin-compatible substitution in PNP circuits, verify if other PDTA114 variants (e.g., PDTA114TT) match the required package size, as they may differ in physical dimensions despite similar electrical ratings.
FAQ
What are the internal resistor values for the PDTA114EU?
The internal bias resistors are R1 = 10 kΩ (input/base) and R2 = 10 kΩ (emitter).
What is the maximum collector-emitter voltage for this device?
The maximum collector-emitter voltage (VCEO) is -50 V.
Is the PDTA114EU automotive qualified?
No, unless explicitly stated otherwise in specific product announcements, this standard PDTA114EU is not AEC-Q101 qualified. Automotive-grade alternatives like DTA114EU3HZG should be used for automotive applications.
