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The PDTA114EU,135 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates bias resistors within a compact SOT-323 (SC-70) surface-mounted package. The device features a collector-emitter voltage (VCEO) of -50 V and a continuous output current (IO) of -100 mA. Internal bias resistors are specified as R1 = 10 kΩ and R2 = 10 kΩ. Key electrical characteristics include a DC current gain (hFE) of 30 at IC = -5 mA, a transition frequency (fT) of 180 MHz, and a maximum power dissipation (Ptot) of 200 mW at 25 °C ambient temperature.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel size or tape width. Confirm RoHS compliance status and manufacturing origin codes via the marking code on the component body. Ensure the requested variant matches the required production data sheet version for design integrity.
Select this component when a PNP logic interface with integrated biasing is required in space-constrained designs. The SOT-323 package suits low-volume pick-and-place assembly. Verify that the -50 V rating and 100 mA current capacity align with the target load requirements and operating voltage levels.
This part belongs to the PDTA114 series of PNP resistor-equipped transistors from Nexperia. It serves as the PNP counterpart to the NPN PDTC114EU. The series is designed to replace discrete resistor-transistor networks, offering a standardized solution for general-purpose digital switching and amplification tasks.
The NPN complement is the PDTC114EU. For equivalent functionality in different packages, consider the PDTA114TT (SOT-23). Automotive-grade alternatives include the DTA114EU3HZG (SOT-323) if AEC-Q101 qualification is required.