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Product Detailed Parameters
- Description：TRANS PREBIAS
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Bulk
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The PDTA114TE,115 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a single PNP bipolar junction transistor with two built-in bias resistors within an SOT-323 (SC-70) surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Typical internal resistor values are R1 = 10 kΩ and R2 = 47 kΩ. Key electrical characteristics include a DC current gain (hFE) minimum of 100 at 5 mA and 5 V, a saturation voltage of 200 mV at specific test conditions, and a transition frequency of 180 MHz. Maximum power dissipation is rated at 200 mW.
Feature Summary
- Integrates PNP transistor with dual bias resistors to simplify circuit design
- Reduces component count and assembly costs in surface-mount applications
- Suitable for general-purpose switching and amplification tasks
Applications
- General purpose switching and amplification circuits
- Inverter and interface circuits
- Circuit driver applications
Procurement Notes
Verify the specific suffix 'TE' against official Nexperia documentation to confirm tape and reel packaging specifications, as standard variants often use 'EU' or 'YU'. Ensure compatibility with automated pick-and-place equipment requirements for the SOT-323 package. Confirm RoHS compliance status through the manufacturer's latest declaration before procurement.
Selection Notes
Select this component when a compact PNP solution with integrated base and emitter resistors is required. Compare typical resistor ratios against circuit biasing needs. Verify that the 100 mA collector current and 50 V breakdown voltage meet system constraints. Consider thermal management for the 200 mW power dissipation limit in enclosed designs.
Part Context
This part belongs to the PDTA114 series of NPN/PNP Resistor-Equipped Transistors from Nexperia. These devices are designed to replace discrete transistor-resistor networks, saving PCB space. The SOT-323 package offers a small footprint suitable for portable electronics. Related parts include PDTA114EU and PDTA114YU, which share similar electrical characteristics but may differ in packaging or resistor tolerances.
Replacement Considerations
Direct substitutes include PDTA114EU,115 and PDTA114YU,115 from Nexperia, provided the resistor values and package type match the design requirements. Cross-manufacturer equivalents should be verified for pinout compatibility and electrical parameter alignment.
