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The PDTA114TEF,115 is a PNP Resistor-Equipped Transistor (RET) from the PDTA114T series, manufactured by Nexperia. It features an integrated base bias resistor R1 of 10 kΩ with R2 left open. The device provides a collector-emitter voltage (VCEO) of -50 V and supports an output current (IO) of -100 mA. Key electrical characteristics include a DC current gain (hFE) of 200 at IC = -1 mA and VCE = -5 V, a saturation voltage (VCEsat) of -150 mV at IC = -10 mA, and a collector capacitance of 3 pF. The component is housed in the SOT416 (SC-75) surface-mounted package.
Verify the specific suffix 'EF' against the official Nexperia ordering information table, as the provided datasheet revision history explicitly notes the removal of type number PDTA114TEF. Confirm current product status and availability directly with the manufacturer or authorized distributors, as this variant may be discontinued or superseded by other packages within the PDTA114T family.
Select this component when a PNP RET with a 10 kΩ base resistor is required in the SOT416 (SC-75) package. Ensure the application operates within the -50 V collector-emitter voltage limit and -100 mA output current constraint. Consider thermal resistance limits if operating near maximum power dissipation ratings.
The PDTA114TEF belongs to the broader PDTA114T series of PNP Resistor-Equipped Transistors. This family includes variants in different packages such as SOT323, SOT23, and SOT54. The series is designed to replace multiple discrete components with a single surface-mount device, streamlining assembly processes in consumer and industrial electronics.
Publicly confirmed substitute part numbers are not available in the provided documentation. The datasheet revision history indicates that PDTA114TEF was removed; therefore, verify if other PDTA114T variants in different packages serve as direct replacements.