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The PDTA114TK,115 is a PNP Resistor-Equipped Transistor (RET) from the PDTA114T series, manufactured by Nexperia. It integrates a single PNP transistor with a built-in base bias resistor (R1 = 10 kΩ) and an open emitter resistor (R2). The device is housed in the SOT346 (SC-59A/TO-236) surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a continuous output current (IO) of -100 mA, and a total power dissipation (Ptot) of 250 mW at 25 °C ambient temperature. The DC current gain (hFE) is specified as a minimum of 200 at IC = -1 mA and VCE = -5 V.
Verify the manufacturer designation, as the product was originally released under NXP Semiconductors and is now produced by Nexperia B.V. Confirm the specific ordering suffix matches the required tape and reel packing method for automated assembly. Ensure the component status is checked against the latest product data sheet revision to confirm availability and compliance with current specifications.
Select this component when a compact PNP switching solution with integrated biasing is required. The SOT346 package offers a small footprint suitable for space-constrained designs. Verify that the 10 kΩ internal resistor value aligns with the driving source impedance and desired base current requirements for the target application logic levels.
This part belongs to the PDTA114T family of PNP Resistor-Equipped Transistors. Other variants in the series include PDTA114TE (SOT416), PDTA114TM (SOT883), PDTA114TS (SOT54), PDTA114TT (SOT23), and PDTA114TU (SOT323). All share the same electrical characteristics but differ in physical package dimensions and pin configurations.
Direct replacements within the same family include PDTA114TE, PDTA114TM, PDTA114TS, PDTA114TT, and PDTA114TU, provided the package form factor is compatible with the PCB layout. Cross-family substitutes must be evaluated for matching VCEO, IO, and R1 values.