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The PDTA114TT,215 is a PNP Resistor-Equipped Transistor (RET) from the PDTA114T series, manufactured by Nexperia USA Inc. It integrates a single PNP transistor with a built-in base bias resistor (R1 = 10 kΩ, typical; range 7–13 kΩ) in an SOT-23 (TO-236AB) surface-mount package. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous output current (IO) of -100 mA. Key electrical characteristics include a DC current gain (hFE) of at least 200 at IC = -1 mA, a collector-emitter saturation voltage (VCEsat) of -150 mV max at IC = -10 mA, and a total power dissipation (Ptot) of 250 mW at 25 °C ambient temperature.
Verify the specific ordering suffix ',215' corresponds to the standard tape-and-reel packaging configuration for the SOT-23 package as defined in the official Nexperia packing information tables. Confirm that the marking code '*11' aligns with the manufacturing origin indicated on the physical components received. Ensure compliance with RoHS directives applicable to the production batch.
Select this component when a PNP switch with integrated base biasing is required to minimize board space and assembly steps. The 10 kΩ internal resistor value is suitable for standard logic level interfacing. Compare against the NPN complement PDTC114TT if complementary switching pairs are needed within the same package family.
This part belongs to the PDTA114T series of PNP resistor-equipped transistors. The series includes variants in different packages such as SOT323 (PDTA114TU), SOT883 (PDTA114TM), and through-hole SOT54 (PDTA114TS). All variants share the same electrical profile but differ in thermal resistance and physical dimensions.
Direct functional substitutes within the same package include other PDTA114T series parts like PDTA114TU (SOT-323) if pin compatibility allows adaptation. For identical SOT-23 footprint replacement, verify equivalent R1 values and VCEO ratings from other manufacturers' digital transistor catalogs.