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The PDTA114YE,115 is a pre-biased PNP transistor manufactured by NXP USA Inc. It integrates a single PNP bipolar junction transistor with internal bias resistors R1 and R2 within a compact SOT-323 surface-mount package. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Internal resistance values are specified as 10 kOhms for the base resistor (R1) and 47 kOhms for the emitter resistor (R2). Key electrical characteristics include a DC current gain (hFE) minimum of 30 at 5 mA and 5 V, and a transition frequency of 180 MHz. The component operates within a temperature range of -40°C to 150°C.
Verify the specific suffix YE against official NXP documentation to confirm the exact resistor ratio and packaging details, as suffixes define variant specifications. Ensure the source document explicitly lists the PDTA114YE,115 part number to avoid confusion with similar pre-biased transistor families or alternative resistor configurations.
Select this component when a compact PNP switching solution with integrated biasing is required. Compare the 10 kOhm/47 kOhm internal resistor ratio against application requirements for base drive current. Verify that the SOT-323 thermal performance meets the system's power dissipation limits under maximum operating conditions.
This component belongs to the PDTA114 series of Resistor-Equipped Transistors (RETs). These devices combine discrete transistors with precision resistors to simplify circuit design. The series offers various configurations and packages, providing designers with flexible options for space-constrained digital and analog switching applications.
Publicly confirmed substitute part numbers for PDTA114YE,115 were not identified in the provided reference data. Cross-referencing requires verifying pin compatibility, electrical parameters, and package dimensions with equivalent RET products from other manufacturers.