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The PDTA114YM,315 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a single PNP bipolar junction transistor with built-in biasing resistors into a compact SOT-963 (SC-88) surface-mount package. The device features a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 100 mA. Internal resistor values are specified as R1 = 10 kΩ and R2 = 47 kΩ. Key electrical characteristics include a DC current gain (hFE) of at least 100 at Ic=10mA, Vce=-5V, and a saturation voltage of 150 mV max at Ib=500µA, Ic=10mA. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 200 mW.
Verify the specific suffix '315' corresponds to the required tape-and-reel packaging format, typically 7-inch reels, against the manufacturer's ordering information. Confirm RoHS compliance status and lead times directly with authorized distributors or Nexperia sales channels prior to procurement. Ensure the SOT-963 footprint matches the target PCB layout constraints.
Select this component when a PNP configuration with integrated base and emitter resistors is required in a minimal footprint. Compare internal resistance ratios against other RET families if specific biasing currents differ. Verify thermal management requirements for the SOT-963 package under expected load conditions.
This part belongs to the PDTA114 series of Resistor-Equipped Transistors from Nexperia. It serves as a pre-biased alternative to discrete BJT and resistor combinations. The YM variant specifically denotes the PNP type with defined internal resistance values, packaged in the small SOT-963 form factor suitable for high-density surface mount assemblies.
Direct substitutes may include other PNP RETs with similar 50V/100mA ratings and comparable R1/R2 values in SC-88 or SOT-963 packages. Verify pinout compatibility and thermal characteristics before substitution.