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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A 3DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：180 MHz
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q100
- Mounting Type：Surface Mount
- Package / Case：3-XFDFN
- Supplier Device Package：DFN1006B-3
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Overview
The PDTA114YMB is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a single PNP transistor with built-in bias resistors R1 and R2 into a leadless ultra-small DFN1006B-3 (SOT883B) plastic package measuring 1.0 x 0.6 x 0.37 mm. The device supports an output current of -100 mA and a collector-emitter voltage of -50 V. Internal resistance values are specified as R1 = 10 kΩ and R2 = 47 kΩ, yielding a typical ratio of 4.7. It features a transition frequency of 180 MHz and total power dissipation of 250 mW at 25 °C ambient temperature.
Feature Summary
- Built-in bias resistors simplify circuit design and reduce component count
- Leadless ultra-small SMD plastic package with low profile height
- AEC-Q101 qualified for automotive applications
Applications
- Low-current peripheral driver
- Control of IC inputs
- Mobile applications
Procurement Notes
Verify the specific ordering suffix to confirm packaging orientation and reel specifications. Confirm RoHS compliance status and REACH registration details prior to integration. Ensure the design accounts for the absolute maximum ratings to prevent permanent damage during operation or thermal stress events.
Selection Notes
Select this component when space constraints require a leadless package with a body height of 0.37 mm. The integrated resistor network eliminates external biasing components, reducing pick-and-place costs. Verify that the required DC current gain and saturation voltage meet the specific load requirements of the target application circuit.
Part Context
This part belongs to the PDTA114 series of PNP resistor-equipped transistors. The NPN complement is PDTC114YMB. The 'YMB' suffix indicates the specific DFN1006B-3 package variant. This family is designed to replace general-purpose transistors in digital applications while offering improved board space efficiency.
Replacement Considerations
PDTC114YMB (NPN complement)
FAQ
What are the internal resistor values?
The device includes a base resistor (R1) of 10 kΩ and an emitter-base resistor (R2) of 47 kΩ.
Is this component suitable for automotive use?
Yes, the product has been qualified in accordance with the AEC-Q101 standard for discrete semiconductors.
What is the package type?
It uses a leadless ultra-small DFN1006B-3 (SOT883B) plastic package.
