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The Nexperia PDTA114YQAZ is a PNP Resistor-Equipped Transistor (RET) housed in a leadless DFN1010D-3 (SOT1215) package. It features built-in bias resistors with R1 at 10 kΩ and R2 at 47 kΩ, yielding a typical ratio of 4.7. The device supports a collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at IC = -5 mA and VCE = -5 V, a maximum collector-emitter saturation voltage of -100 mV at IC = -5 mA, and a transition frequency (fT) of 180 MHz. Total power dissipation reaches 280 mW on standard FR4 PCBs.
Verify the complete part number including the suffix to ensure correct packaging and tape/reel specifications. Confirm that the DFN1010D-3 footprint matches your PCB layout requirements. Check the latest datasheet revision for any updates to limiting values or thermal characteristics before finalizing the design.
Select this component when a compact PNP switch with integrated biasing is required. Ensure the application voltage does not exceed the -50 V collector-emitter rating. Consider the 0.37 mm profile for low-profile designs. Verify thermal management capabilities based on the specific PCB copper layer configuration.
This device belongs to the PDTA143X/123J/143Z/114YQA series of 50 V, 100 mA PNP resistor-equipped transistors. It serves as a digital alternative to discrete transistor-resistor combinations, offering a cost-saving solution for BC847/BC857 series replacements in digital switching circuits.
Direct substitutes within the same family include PDTA143XQA, PDTA123JQA, and PDTA143ZQA, which share the same package but differ in internal resistor values. Ensure the replacement maintains the required bias resistance ratio for the specific circuit function.