SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PDTA114YQB is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an ultra-small DFN1110D-3 (SOT8015) leadless package with side-wettable flanks. It features built-in bias resistors R1 of 10 kΩ and R2 of 47 kΩ. The device supports a collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 100 at IC = -5 mA and VCE = -5 V, a transition frequency (fT) typical of 180 MHz, and a total power dissipation of 340 mW on a standard FR4 PCB.
Verify the specific ordering suffix and reel quantity requirements directly with authorized distributors or Nexperia sales offices. Confirm that the DFN1110D-3 footprint matches your PCB design guidelines, particularly regarding stencil thickness and reflow soldering profiles to ensure reliable joint formation.
Select this component when a compact PNP switching solution with integrated base biasing is required. The 10 kΩ input resistor value determines the drive current requirements compared to other RET variants in the series. Ensure the application voltage does not exceed the -50 V collector-emitter rating and consider the thermal resistance values for high-power dissipation scenarios.
This part belongs to the PDTA143X/123J/143Z/114Y/124XQB series, which shares the same DFN1110D-3 package but varies in internal resistor values. It serves as the PNP complement to the PDTC114YQB NPN RET. The series is designed to replace discrete transistor and resistor combinations, offering a cost-saving alternative to older series like BC857 in digital applications.
Direct pin-compatible substitutes within the same package include PDTA143XQB, PDTA123JQB, PDTA143ZQB, and PDTA124XQB, though their internal resistor values differ. For functional equivalence with different packaging, legacy SOT323 or SOT23 RETs may be considered if board space allows.