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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V TO92-3
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Box (TB)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：500 mW
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
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Overview
The PDTA114YS,126 is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. It integrates base and emitter resistors within a compact SOT-323 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a transition frequency of 180 MHz. The device features a DC current gain (hFE) of at least 30 at 5 mA and 5 V, with a maximum saturation voltage of 150 mV under specified conditions. Power dissipation is rated at 200 mW, and the internal resistors are typically 10 kOhms each.
Feature Summary
- Integrated base and emitter resistors simplify circuit design by reducing component count.
- Compact SOT-323 surface-mount package suitable for space-constrained applications.
- PNP configuration with high-speed switching capabilities up to 180 MHz.
Applications
- Switching applications in low-power digital circuits
- Interface driving between logic families
- Load switching in portable electronic devices
Procurement Notes
Verify the manufacturer designation as Nexperia USA Inc. when sourcing this component. Confirm the specific suffix '126' corresponds to the required tape-and-reel packaging format. Ensure compliance with RoHS3 directives and check the moisture sensitivity level (MSL 1) for proper handling during assembly processes.
Selection Notes
Select this component for designs requiring a compact PNP switch with integrated biasing. Compare the 100 mA current rating and 50 V breakdown voltage against load requirements. Consider the SOT-323 footprint constraints and thermal dissipation limits of 200 mW for the final enclosure design.
Part Context
This part belongs to the PDTA series of Resistor-Equipped Transistors (RETs). These devices combine a single BJT with two resistors to provide simplified biasing solutions. The series offers various configurations and packages to replace multiple discrete components in modern electronics manufacturing.
Replacement Considerations
- PDTA114EU
- PDTA114Z
FAQ
What is the typical value of the integrated resistors?
The internal base resistor (R1) and emitter resistor (R2) are typically 10 kOhms each.
What is the maximum power dissipation?
The maximum power dissipation is 200 mW.
Is this component suitable for high-frequency switching?
Yes, it has a transition frequency of 180 MHz, making it suitable for moderate-speed switching applications.
