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The Nexperia PDTA114YU-QX is a PNP Resistor-Equipped Transistor (RET) designed for surface-mount applications in the SC-70, SOT-323 package. It integrates a single PNP bipolar junction transistor with built-in bias resistors, R1 and R2, both typically valued at 10 kOhms. The device features a collector-emitter breakdown voltage (VCEO) of -50 V and a continuous collector current (Ic) of -100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 100, a transition frequency (fT) of 180 MHz, and a maximum power dissipation (Pd) of 200 mW. The unit operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'QX' against official Nexperia documentation to confirm packaging details and exact RoHS compliance status. Ensure the ordering part number matches the required tape-and-reel specifications for automated assembly processes. Cross-reference the datasheet revision date to confirm the most recent electrical characteristics and mechanical dimensions are applied.
Select this component when a compact PNP switching solution with integrated base biasing is required. The SOT-323 package suits space-constrained designs. Verify that the 50 V collector-emitter voltage rating meets the circuit's maximum operating conditions. Confirm that the 100 mA current capability aligns with the load requirements for the intended application.
This part belongs to the PDTA114 series of resistor-equipped transistors from Nexperia. These devices combine a BJT with internal resistors to simplify circuit design. The 'Q' suffix indicates automotive qualification under AEC-Q101 standards. The 'YU' denotes the SOT-323 package type. This series is distinct from standard BJTs by its integrated passive components.
Publicly confirmed substitute part numbers for PDTA114YU-QX were not identified in the provided source material. Designers should consult official Nexperia documentation or authorized distributors for verified equivalent parts.