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The PDTA115EE,115 is a PNP resistor-equipped transistor from the PDTA115E series manufactured by NXP Semiconductors. It integrates two bias resistors (R1 and R2) within a single SOT416 package to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a DC output current (IO) of -20 mA, and integrated resistors with nominal values of 100 kΩ each. The device features a typical DC current gain (hFE) of 80 at -5 mA collector current and a low input-off voltage.
Verify the specific ordering suffix against the manufacturer's latest product data sheet to confirm the exact package variant and manufacturing origin. Ensure that the selected component meets the required thermal resistance and power dissipation limits for the intended operating ambient temperature conditions.
Select this component when a compact PNP solution with integrated base and emitter biasing is required. The SOT416 package offers a surface-mounted footprint suitable for automated assembly. Consider the 100 kΩ internal resistor values to ensure proper biasing currents are achieved without external components in the target application circuit.
This part belongs to the PDTA115E series of PNP resistor-equipped transistors. The series includes multiple package options such as SOT23, SOT323, and SOT54, all sharing the same internal 100 kΩ/100 kΩ resistor configuration. The PDTA115EE specifically utilizes the SOT416 plastic surface-mounted package.
The datasheet identifies the PDTC115EE as the NPN complement to the PDTA115EE. Designers requiring complementary logic or push-pull configurations should consider the PDTC115EE series devices which share similar packaging and resistor integration characteristics.