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The PDTA115ET,215 is a PNP resistor-equipped transistor (RET) manufactured by Nexperia. It integrates two bias resistors within a single SOT23 package: R1 connected to the base and R2 connected between the base and emitter. The nominal resistance for both R1 and R2 is 100 kΩ. Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -50 V and a DC output current (IO) of -20 mA. The device features a typical DC current gain (hFE) of 80 at IC = -5 mA and a low collector-emitter saturation voltage (VCEsat) of -150 mV under standard test conditions.
Verify the ordering suffix '215' against official Nexperia documentation to confirm reel specifications or tape-and-reel packaging details. Ensure the requested part matches the SOT23 package outline and marking code 'AB'. Cross-reference with the NXP Semiconductors product data sheet to confirm current production status and availability.
Select this component when a compact PNP solution with integrated biasing is required. The 100 kΩ resistor values are suitable for general-purpose logic interfacing. Consider the SOT23 package dimensions for PCB space constraints. Verify that the -20 mA DC output current meets the load requirements of the specific application circuit.
The PDTA115E series includes variants in multiple packages such as SOT416, SOT490, SOT346, SOT883, SOT54, and SOT323. The PDTA115ET specifically utilizes the SOT23 plastic surface-mounted package. The NPN complement for this series is the PDTC115ET. All variants share identical internal resistor values and core electrical characteristics.
Direct replacements must match the PNP RET configuration with 100 kΩ / 100 kΩ resistors and the SOT23 package. Other members of the PDTA115E family (e.g., PDTA115EU) offer different pinouts and require schematic adaptation.