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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SC75
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75
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Overview
The PDTA123EE,115 is a PNP resistor-equipped transistor from the PDTA123E series manufactured by NXP Semiconductors. It integrates two bias resistors with a single PNP transistor in a compact SOT416 (SC-75) plastic surface-mounted package. The device features an internal R1 of 2.2 kΩ and R2 of 2.2 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a DC output current (IO) of -100 mA, and a total power dissipation (Ptot) of 150 mW at ambient temperatures up to 25 °C. The junction temperature maximum is 150 °C.
Feature Summary
- Integrates built-in bias resistors to simplify circuit design and reduce component count.
- Reduces pick and place costs through integrated passive components.
- Provides general-purpose switching and amplification capabilities.
Applications
- General purpose switching and amplification
- Inverter and interface circuits
- Circuit driver
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package variant and manufacturing origin. Ensure that the procurement channel is authorized to guarantee component authenticity and traceability. Cross-reference the datasheet revision date with the most recent product data sheet available on the official NXP website before initiating any design or purchasing process.
Selection Notes
Select this component when a compact PNP solution with integrated biasing is required for space-constrained designs. The SOT416 package offers a small footprint suitable for surface-mount assembly. Evaluate the thermal resistance characteristics relative to the expected operating ambient temperature to ensure the total power dissipation limits are not exceeded during continuous operation.
Part Context
This component belongs to the PDTA123E series of PNP resistor-equipped transistors. The series includes various package options such as SOT23, SOT323, and SOT883, all sharing similar electrical characteristics but differing in physical dimensions and mounting styles. The PDTA123EE specifically utilizes the SOT416 package configuration.
Replacement Considerations
Direct substitutes within the same series include PDTA123EK, PDTA123EM, PDTA123ES, PDTA123ET, and PDTA123EU. Verify pin compatibility and package dimensions when replacing with other variants in the PDTA123E family.
FAQ
What are the values of the internal bias resistors?
The internal bias resistors R1 and R2 both have a typical value of 2.2 kΩ.
What is the maximum collector-emitter voltage for this device?
The maximum collector-emitter voltage (VCEO) is -50 V.
Which package type does the PDTA123EE use?
The PDTA123EE uses the SOT416 package, also known as SC-75.
