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The PDTA123EK,115 is a PNP resistor-equipped transistor from the PDTA123E series manufactured by NXP Semiconductors. It integrates two bias resistors (R1 = 2.2 kΩ, R2 = 2.2 kΩ) within a single SOT346 (SC-59) surface-mount package. The device features a collector-emitter voltage (VCEO) of -50 V and a continuous DC output current (IO) of -100 mA. Total power dissipation is rated at 250 mW under standard mounting conditions. The component operates within an ambient temperature range of -65 °C to +150 °C and supports a maximum junction temperature of 150 °C.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm manufacturing origin and compliance status. Ensure the selected package variant matches the intended PCB footprint requirements. Confirm that the thermal resistance characteristics align with the target application's heat dissipation constraints before finalizing procurement specifications.
Select this component when a compact PNP transistor with integrated base and emitter biasing is required. The SOT346 package offers a suitable form factor for space-constrained designs. Verify that the 2.2 kΩ internal resistor values meet the specific drive requirements of the target logic or interface circuitry without external components.
This part belongs to the PDTA123E series of PNP resistor-equipped transistors. The series includes various package options such as SOT23, SOT323, and SOT883. The PDTA123EK specifically utilizes the SOT346 (SC-59) plastic surface-mounted package. The series is designed to replace discrete resistor-transistor combinations in switching and amplification roles.
Direct substitutes include other PDTA123E series variants with different packages, such as PDTA123ET (SOT23) or PDTA123EU (SOT323), provided the PCB layout accommodates the respective footprints. Cross-brand equivalents must be verified for matching electrical parameters and pin configurations.