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The PDTA123EM,315 is a PNP resistor-equipped transistor from the PDTA123E series manufactured by Nexperia. It integrates two bias resistors (R1 = 2.2 kΩ, R2 = 2.2 kΩ) within a single SOT883 (SC-101) leadless ultra-small plastic package. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V and a DC output current (IO) of -100 mA. The device supports a total power dissipation of 250 mW at an ambient temperature up to 25 °C and operates with a junction temperature range up to 150 °C.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm manufacturing origin and compliance status. Ensure that the SOT883 package dimensions align with the target PCB footprint requirements. Confirm thermal resistance values under actual mounting conditions to maintain safe operating temperatures during operation.
Select this component for designs requiring a compact PNP solution with integrated base biasing. The SOT883 package is suitable for high-density surface-mount applications where space is limited. Consider the -50 V rating and 100 mA current capability when matching load requirements. Verify compatibility with standard reflow soldering profiles specified for the package.
This part belongs to the PDTA123E series of PNP resistor-equipped transistors. The series offers various package options including SOT23, SOT323, and through-hole variants. The PDTA123EM specifically utilizes the SOT883 package, providing a smaller footprint compared to traditional SMD packages while maintaining similar electrical characteristics to other members of the family.
Direct functional equivalents within the same series include PDTA123ET (SOT23) and PDTA123EU (SOT323). These parts share identical electrical specifications but differ in physical package dimensions. Verify mechanical fit and soldering compatibility before substitution.