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The PDTA123ES,126 is a PNP resistor-equipped transistor (RET) from the PDTA123E series manufactured by NXP Semiconductors. It integrates two bias resistors within a single TO-92 (SOT54) plastic package to simplify circuit design and reduce component count. The device features a collector-emitter voltage of -50 V and a maximum DC output current of -100 mA. Internal resistors R1 and R2 are both nominally 2.2 kΩ. The total power dissipation in this through-hole package is rated at 500 mW at an ambient temperature of 25 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm manufacturing origin and compliance status. Confirm that the SOT54 package variant matches the required mechanical footprint for the target assembly process. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability of the discrete semiconductor component.
Select the PDTA123ES,126 when a through-hole TO-92 form factor is required for PNP logic interfacing or low-current switching tasks. This package offers higher thermal dissipation compared to surface-mount alternatives like SOT23 or SC-70. Verify that the integrated 2.2 kΩ base and emitter resistors align with the specific drive requirements of the connected logic family before finalizing the schematic design.
This component belongs to the PDTA123E series of PNP resistor-equipped transistors. The series includes various package options such as SOT23, SOT323, and SOT883, all sharing identical electrical characteristics but differing in physical dimensions and mounting methods. The PDTA123ES specifically utilizes the SOT54 leaded package, providing a robust solution for prototyping or applications requiring manual soldering.
Direct functional equivalents include other PDTA123E series variants with different packages, such as PDTA123ET (SOT23) or PDTA123EU (SC-70), provided the PCB layout supports surface mount technology. For through-hole replacements, verify pinout compatibility between SOT54 variants.