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The PDTA123ET,215 is a PNP resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. It integrates two bias resistors within a single SOT-23 surface-mount package to simplify circuit design and reduce component count. The device features a collector-emitter voltage of -50 V and a DC output current capability of -100 mA. Typical internal resistance values are R1 = 2.2 kΩ and R2 = 2.2 kΩ. The unit operates within an ambient temperature range of -65 °C to +150 °C with a maximum junction temperature of 150 °C.
Verify the specific ordering suffix
Select this component when a compact PNP switching solution with integrated base biasing is required. The SOT-23 package suits space-constrained designs. Ensure the -100 mA current limit meets load requirements. Verify thermal dissipation capabilities relative to the PCB copper area, as the SOT-23 package has a thermal resistance of 500 K/W under standard mounting conditions.
This part belongs to the PDTA123E series of PNP resistor-equipped transistors. It serves as the PNP counterpart to the PDTC123ET NPN RET. The 'ET' designation indicates the SOT-23 plastic surface-mounted package variant. The ',215' suffix typically denotes the reel packaging configuration used by distributors.
Direct functional substitutes include other PNP RETs with similar -50V/-100mA ratings and 2.2kΩ/2.2kΩ resistor networks in SOT-23 packages, such as the BC847B series equivalents or other manufacturer's PDTA123 variants. Verify pinout compatibility and thermal characteristics before substitution.