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The PDTA123EU-Q is a PNP Resistor-Equipped Transistor (RET) housed in an SOT323 (SC-70) surface-mount package. It integrates bias resistors R1 and R2, both typically 2.2 kΩ, with a ratio of 1. The device supports a collector-emitter voltage (VCEO) of -50 V and a continuous output current (IO) of -100 mA. Total power dissipation reaches 200 mW at ambient temperatures up to 25 °C. Junction temperature limits extend to 150 °C, with an operating range from -65 °C to +150 °C. The component is qualified according to AEC-Q101 standards.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Confirm that the requested quantity aligns with standard manufacturing lot sizes. Ensure compliance with RoHS directives and verify the product status as a production item before finalizing procurement orders.
Select this component when a compact PNP transistor with integrated base biasing is required for space-constrained designs. The SOT323 package offers a small footprint suitable for high-density PCB layouts. Consider the -50 V rating and 100 mA current capability to ensure adequate headroom for the intended load conditions and signal levels.
This part belongs to the PDTA123E series of PNP resistor-equipped transistors manufactured by Nexperia. It serves as the complement to the PDTC123EU NPN variant. The series is designed to replace discrete resistor-transistor combinations, streamlining assembly processes while maintaining consistent electrical characteristics across automotive-grade components.
The PDTC123EU is the documented NPN complement within the same family. Verify pinout compatibility and polarity differences when substituting. No other direct cross-model replacements are confirmed in the provided datasheet.