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The PDTA123EU,115 is a PNP resistor-equipped transistor (RET) manufactured by Nexperia. It integrates a single NPN/Bipolar junction transistor with built-in bias resistors in a compact SOT-323 (SC-70) surface-mount package. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Typical internal resistance values are 2.2 kΩ for both the base resistor (R1) and the base-emitter resistor (R2). It operates within a temperature range of -65°C to +150°C and has a power dissipation rating of 200 mW.
Verify the specific suffix '115' corresponds to the standard tape-and-reel packaging format required for automated assembly lines. Confirm that the SOT-323 footprint matches the target PCB silkscreen and copper pad layout. Ensure the procurement channel provides original manufacturer documentation to validate authenticity and traceability for quality assurance compliance.
Select this component when a PNP digital transistor with a 2.2 kΩ input resistance is required. The SOT-323 package is suitable for high-density board designs. Consider the 50 V voltage rating and 100 mA current limit against load requirements. Verify thermal management needs given the 200 mW power dissipation capability in the specified package.
This part belongs to the PDTA123E series of PNP resistor-equipped transistors from Nexperia. The series offers various package options including SOT883, SOT23, and SOT323. The PDTA123EU variant specifically utilizes the SOT-323 form factor. These devices are designed to replace multiple discrete components, streamlining the bill of materials for logic and interface circuits.
Compatible substitutes include PDTA123ET,115 (SOT-23 package) and PDTA123EM (DFN1006-3 package). Cross-package replacements require PCB footprint modification. Direct pin-to-pin equivalents within the same SOT-323 package should be verified against the official Nexperia selection guide for electrical parameter matching.