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The PDTA123JE,115 is a PNP resistor-equipped transistor (RET) housed in the SOT416 (SC-75) surface-mount package. It integrates built-in bias resistors with typical values of R1 = 2.2 kΩ and R2 = 47 kΩ, yielding a bias resistor ratio of 21. The device supports a collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA. Total power dissipation is rated at 150 mW at 25 °C ambient temperature, with a maximum junction temperature of 150 °C. The component operates within an ambient temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix against manufacturer documentation to confirm packaging details such as tape width and reel quantity. Confirm RoHS compliance status through official datasheets or supplier declarations prior to integration into production workflows.
Select this component when a compact PNP solution with integrated biasing is required for digital applications. Ensure the SOT416 package dimensions fit the available PCB real estate. Verify that the 150 mW power dissipation rating accommodates the thermal conditions of the target application environment.
This part belongs to the PDTA123J series of PNP resistor-equipped transistors manufactured by Nexperia, formerly NXP Semiconductors. The series includes variants in different packages such as SOT883, SOT23, and SOT323, all sharing similar electrical characteristics but differing in physical footprint and thermal performance.
Direct replacements include other PDTA123JE units from authorized distributors. Alternative packages in the same family, such as PDTA123JU (SOT323), require verification of pin compatibility and thermal limits due to package differences.