PDTA123JK,115

PDTA123JK,115

  • Description:TRANS PREBIAS PNP 50V 0.1A SMT3
  • Series:-

SKU:3360d9a1b10a Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A SMT3
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:-
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SMT3; MPAK

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PDTA123JK,115

Overview

The PDTA123JK,115 is a PNP resistor-equipped transistor from the PDTA123J series manufactured by NXP Semiconductors. It integrates two bias resistors within a single SOT346 (SC-59) surface-mounted package. The internal network consists of R1 with a typical value of 2.2 kΩ and R2 with a typical value of 47 kΩ. Key electrical specifications include a collector-emitter voltage (VCEO) rating of -50 V and a DC output current (IO) limit of -100 mA. The device features a DC current gain (hFE) of at least 100 at IC = -10 mA and VCE = -5 V.

Feature Summary

  • Integrates dual bias resistors to simplify circuit topology
  • Reduces overall component count in switching applications
  • Facilitates automated pick-and-place assembly processes

Applications

  • General purpose switching circuits
  • Amplification stages
  • Inverter and interface logic circuits
  • Circuit driver implementations

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current product database to confirm availability and manufacturing origin. Ensure the selected package variant matches the required PCB footprint. Confirm that the absolute maximum ratings align with the operational stress conditions of the target design environment before finalizing procurement orders.

Selection Notes

Select this component for designs requiring a compact PNP solution with integrated base biasing. The SOT346 package offers a small form factor suitable for space-constrained layouts. Verify that the required input resistance values match the fixed internal R1 and R2 configuration. Ensure the application voltage does not exceed the -50 V collector-emitter rating under any operating condition.

Part Context

This part belongs to the PDTA123J series of PNP resistor-equipped transistors. The series includes multiple package options such as SOT23, SOT323, and TO-92. The PDTA123JK specifically utilizes the SOT346 package. The NPN complement for this device is the PDTC123JK. All variants share identical internal resistor values and core electrical characteristics.

Replacement Considerations

The direct NPN complement is the PDTC123JK. Other series members like PDTA123JT or PDTA123JU offer different packages but identical electrical performance. Verify pinout compatibility when substituting between different package types within the same series.

PDTA123JK,115PDTA123JK,115

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