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The PDTA123JK,115 is a PNP resistor-equipped transistor from the PDTA123J series manufactured by NXP Semiconductors. It integrates two bias resistors within a single SOT346 (SC-59) surface-mounted package. The internal network consists of R1 with a typical value of 2.2 kΩ and R2 with a typical value of 47 kΩ. Key electrical specifications include a collector-emitter voltage (VCEO) rating of -50 V and a DC output current (IO) limit of -100 mA. The device features a DC current gain (hFE) of at least 100 at IC = -10 mA and VCE = -5 V.
Verify the specific ordering suffix against the manufacturer's current product database to confirm availability and manufacturing origin. Ensure the selected package variant matches the required PCB footprint. Confirm that the absolute maximum ratings align with the operational stress conditions of the target design environment before finalizing procurement orders.
Select this component for designs requiring a compact PNP solution with integrated base biasing. The SOT346 package offers a small form factor suitable for space-constrained layouts. Verify that the required input resistance values match the fixed internal R1 and R2 configuration. Ensure the application voltage does not exceed the -50 V collector-emitter rating under any operating condition.
This part belongs to the PDTA123J series of PNP resistor-equipped transistors. The series includes multiple package options such as SOT23, SOT323, and TO-92. The PDTA123JK specifically utilizes the SOT346 package. The NPN complement for this device is the PDTC123JK. All variants share identical internal resistor values and core electrical characteristics.
The direct NPN complement is the PDTC123JK. Other series members like PDTA123JT or PDTA123JU offer different packages but identical electrical performance. Verify pinout compatibility when substituting between different package types within the same series.