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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT883
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q100
- Mounting Type：Surface Mount
- Package / Case：SC-101, SOT-883
- Supplier Device Package：SOT-883
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Overview
The PDTA123JM,315 is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in the SOT883 (SC-101) leadless ultra-small plastic package. It integrates bias resistors R1 and R2 with a typical ratio of 21:1. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, an output current (IO) of -100 mA, and a total power dissipation (Ptot) of 250 mW at 25°C ambient temperature. The input bias resistor R1 has a typical value of 2.2 kΩ. This component is qualified under AEC-Q101 standards for automotive applications.
Feature Summary
- Integrates built-in bias resistors to simplify circuit design and reduce component count.
- Qualified for automotive applications according to AEC-Q101 standards.
- Provides cost-saving alternative for BC847/857 series in digital applications.
Applications
- Digital applications in automotive and industrial segments
- Control of IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details. The standard packing quantity for the SOT883 package is 10,000 units per reel. Ensure compatibility with reflow soldering processes as specified in the datasheet. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement specifications.
Selection Notes
Select this component when a compact PNP transistor solution with integrated biasing is required for space-constrained designs. The SOT883 package offers a small footprint suitable for high-density PCB layouts. Consider the 250 mW power dissipation limit and thermal resistance characteristics when designing for continuous operation or high-duty cycle applications.
Part Context
This part belongs to the PDTA123J series of PNP resistor-equipped transistors. Other variants in this family include PDTA123JE (SOT416), PDTA123JT (SOT23), and PDTA123JU (SOT323). All share similar electrical characteristics but differ in package dimensions and power dissipation ratings. The NPN complement for this device is the PDTC123JM.
Replacement Considerations
Direct substitutes within the same family include PDTA123JE, PDTA123JT, and PDTA123JU, provided the package form factor change is acceptable. For pin-compatible replacements in different packages, verify that the internal resistor values and voltage/current ratings match the original design requirements.
