PDTA123JMB,315

PDTA123JMB,315

$0.03
  • Description:TRANS PREBIAS PNP 50V 0.1A 3DFN
  • Series:-

SKU:df21c75d684c Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A 3DFN
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:180 MHz
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-101, SOT-883
  • Supplier Device Package:DFN1006B-3

Download product information

PDTA123JMB,315

Overview

The PDTA123JMB,315 is a PNP resistor-equipped transistor manufactured by Nexperia. It integrates a single PNP bipolar junction transistor with built-in bias resistors into a compact DFN1006-3 (SOT883B) surface-mount package. The device features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. Typical internal resistance values are 2.2 kΩ for the base resistor (R1) and 47 kΩ for the emitter resistor (R2). The component supports a maximum power dissipation of 150 mW and operates within a junction temperature range up to 150 °C.

Feature Summary

  • Integrates PNP transistor with dual bias resistors to simplify circuit topology
  • Minimizes printed circuit board area through ultra-small leadless packaging
  • Reduces assembly complexity and pick-and-place costs via single-component solution

Applications

  • General purpose switching and amplification circuits
  • Inverter and interface logic circuits
  • Digital input buffering for microcontrollers

Procurement Notes

Verify the complete ordering code PDTA123JMB,315 against the manufacturer datasheet to ensure correct suffix designation. Confirm that the DFN1006-3 package dimensions align with the target footprint. Check RoHS compliance status and automotive qualification requirements if applicable to the specific production batch.

Selection Notes

Select this component when space constraints require a combined transistor and bias network in a small outline package. Ensure the required DC current gain and saturation voltage meet the load driving specifications. Verify that the 50 V breakdown voltage provides sufficient margin for the operating supply voltage.

Part Context

This part belongs to the PDTA123 series of PNP resistor-equipped transistors from Nexperia. The series offers various package options including SOT883, SOT883B, and SOT23. The JMB suffix specifically denotes the DFN1006-3 variant, distinguishing it from other physical form factors within the same electrical family.

Replacement Considerations

Direct substitutes include PDTA123EM and PDTA123EMB from Nexperia, provided the package type matches the design requirements. Cross-manufacturer equivalents such as Rohm DTA123JMT2L may be considered if pinout compatibility and electrical parameters are verified.

PDTA123JMB,315PDTA123JMB,315
$0.03
Buy Now