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The PDTA123JMB,315 is a PNP resistor-equipped transistor manufactured by Nexperia. It integrates a single PNP bipolar junction transistor with built-in bias resistors into a compact DFN1006-3 (SOT883B) surface-mount package. The device features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. Typical internal resistance values are 2.2 kΩ for the base resistor (R1) and 47 kΩ for the emitter resistor (R2). The component supports a maximum power dissipation of 150 mW and operates within a junction temperature range up to 150 °C.
Verify the complete ordering code PDTA123JMB,315 against the manufacturer datasheet to ensure correct suffix designation. Confirm that the DFN1006-3 package dimensions align with the target footprint. Check RoHS compliance status and automotive qualification requirements if applicable to the specific production batch.
Select this component when space constraints require a combined transistor and bias network in a small outline package. Ensure the required DC current gain and saturation voltage meet the load driving specifications. Verify that the 50 V breakdown voltage provides sufficient margin for the operating supply voltage.
This part belongs to the PDTA123 series of PNP resistor-equipped transistors from Nexperia. The series offers various package options including SOT883, SOT883B, and SOT23. The JMB suffix specifically denotes the DFN1006-3 variant, distinguishing it from other physical form factors within the same electrical family.
Direct substitutes include PDTA123EM and PDTA123EMB from Nexperia, provided the package type matches the design requirements. Cross-manufacturer equivalents such as Rohm DTA123JMT2L may be considered if pinout compatibility and electrical parameters are verified.