SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PDTA123JQAZ is a PNP Resistor-Equipped Transistor (RET) from the PDTA143X/123J/143Z/114YQA series, manufactured by Nexperia. It features an integrated bias resistor network with R1 = 2.2 kΩ and R2 = 47 kΩ. The device is housed in a leadless DFN1010D-3 (SOT1215) plastic package with visible side pads for solderability. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, an output current (IO) of -100 mA, and a minimum DC current gain (hFE) of 100 at IC = -10 mA. The component is AEC-Q101 qualified and designed for surface-mount applications.
Verify the specific ordering suffix 'QAZ' against the official Nexperia datasheet or distributor documentation to confirm packaging details such as reel size or tape-and-reel specifications. Ensure the part number matches the exact resistor ratio (R1=2.2k, R2=47k) required for the design. Cross-reference the marking code '11 00 01' for identification during incoming inspection.
Select this component when a PNP transistor with a fixed high base resistance ratio is needed for digital switching. The PDTA123JQA variant offers a specific R2/R1 ratio of approximately 21, distinct from other series members like PDTA143XQA. Ensure the application voltage does not exceed the -50 V VCEO rating and that the thermal dissipation requirements fit within the SOT1215 package limits.
This device belongs to the PDTA143X/123J/143Z/114YQA family of 50 V, 100 mA PNP resistor-equipped transistors. All members share the same DFN1010D-3 (SOT1215) package and general electrical characteristics, differing primarily in their internal bias resistor values. The PDTA123JQA is the specific member with 2.2 kΩ and 47 kΩ resistors.
Direct functional substitutes within the same series include PDTA143XQA, PDTA143ZQA, and PDTA114YQA, provided the different resistor ratios are acceptable for the circuit design. NPN complements such as PDTC123JQA may be used if the circuit topology requires an NPN configuration instead of PNP.