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The PDTA123JQB-Q is a PNP Resistor-Equipped Transistor (RET) from Nexperia, designed for digital applications. It integrates a transistor with built-in bias resistors R1 (2.2 kΩ) and R2 (47 kΩ). The device features a collector-emitter voltage (VCEO) of -50 V and an output current capability of -100 mA. It is housed in an ultra-small DFN1110D-3 (SOT8015) leadless SMD plastic package with side-wettable flanks, measuring 1.1 x 1.0 x 0.48 mm. Qualified according to AEC-Q101, it supports automatic optical inspection and offers low package height.
Verify the specific ordering suffix and marking code against the official datasheet to ensure correct resistor values and package variant. Confirm that the procurement channel provides genuine Nexperia products with traceable documentation. Check for any recent updates to the product data sheet regarding availability or specification changes before finalizing orders.
Select this component when a compact PNP switching solution with integrated base biasing is required. The specific resistor ratio of approximately 21:1 suits applications needing defined input thresholds. Ensure the PCB footprint matches the DFN1110D-3 outline and consider thermal derating curves if operating near maximum power dissipation limits.
This part belongs to the PDTA143X/123J/143Z/114Y/124XQB-Q series, which shares the same SOT8015 package and general electrical characteristics but varies in internal resistor values. It serves as a cost-saving alternative to discrete transistor-resistor networks in automotive and industrial digital circuits.
PDTC123JQB-Q is the NPN complement within the same series.