PDTA123JQC-QZ

PDTA123JQC-QZ

$0.20
  • Description:TRANS PREBIAS PNP 50V 0.1A 3DFN
  • Series:-

SKU:c6035f74e0b2 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A 3DFN
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):100nA
  • Frequency - Transition:180 MHz
  • Power - Max:360 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:3-XDFN Exposed Pad
  • Supplier Device Package:DFN1412D-3

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PDTA123JQC-QZ

Overview

The PDTA123JQC-Q is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an ultra-small DFN1412D-3 (SOT8009) leadless SMD plastic package with side-wettable flanks. It features built-in bias resistors R1 of 2.2 kΩ and R2 of 47 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA. It is qualified according to AEC-Q101 for automotive applications and operates within a junction temperature range up to 150 °C.

Feature Summary

  • Built-in bias resistors simplify circuit design and reduce component count
  • Low package height of 0.5 mm suitable for space-constrained designs
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • Qualified according to AEC-Q101 for automotive use

Applications

  • Digital applications
  • Controlling IC inputs
  • Switching loads

Procurement Notes

Verify the specific ordering suffix against the official Nexperia datasheet to confirm package type and qualification status. Ensure compatibility with the required PCB footprint dimensions for the DFN1412D-3 package. Confirm that the application environment meets the specified thermal and electrical operating limits defined in the product data sheet.

Selection Notes

Select this component when a compact PNP transistor with integrated biasing is required for digital switching or load control. The DFN1412D-3 package offers a low profile ideal for high-density board layouts. Verify that the internal resistor values (R1=2.2kΩ, R2=47kΩ) align with the target circuit's drive requirements and input impedance specifications.

Part Context

This part belongs to the PDTA143X/123J/143Z/114Y/124XQC-Q series of 50 V, 100 mA PNP resistor-equipped transistors. All members of this series share the same DFN1412D-3 package and AEC-Q101 qualification but differ in their internal bias resistor configurations. The PDTA123JQC-Q specifically utilizes a 2.2 kΩ base resistor and a 47 kΩ emitter resistor.

Replacement Considerations

PDTC123JQC-Q is the NPN complement within the same series.

PDTA123JQC-QZPDTA123JQC-QZ
$0.20
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