PDTA123JT-QR

PDTA123JT-QR

$0.02
  • Description:PDTA123ZT-Q/SOT23/TO-236AB
  • Series:-

SKU:b1a42257e027 Category: Brand:

  
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Product Detailed Parameters

  • Description:PDTA123ZT-Q/SOT23/TO-236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Resistors Included:-
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Resistor - Base (R1):-
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:-
  • Power - Max:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-

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PDTA123JT-QR

Overview

The PDTA123JT-QR is a PNP Resistor-Equipped Transistor (RET) in the SOT23 (TO-236AB) package. It integrates bias resistors R1 and R2 with a typical value of 2.2 kΩ and a ratio of 21. The device supports a collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA. It operates within a junction temperature range of -65 °C to +150 °C. The component features a DC current gain (hFE) of at least 100 at -10 mA and a transition frequency (fT) of 180 MHz. It is qualified under AEC-Q101 standards for automotive applications.

Feature Summary

  • Integrates built-in bias resistors to simplify circuit design and reduce component count.
  • Qualified for automotive applications according to AEC-Q101 standards.
  • Provides high breakdown voltage capability suitable for digital switching loads.

Applications

  • Digital applications in automotive segments
  • Control of IC inputs
  • Switching loads

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing origin. Confirm RoHS compliance status through the manufacturer's latest product data sheet or authorized distributor channels before finalizing procurement specifications.

Selection Notes

Select this component when a compact PNP transistor solution with integrated base biasing is required. Ensure the -50 V collector-emitter voltage rating meets the circuit requirements. Verify that the SOT23 package dimensions align with the PCB footprint constraints and that the thermal resistance characteristics are sufficient for the expected power dissipation levels.

Part Context

This part belongs to the PDTA123J series of PNP resistor-equipped transistors manufactured by Nexperia. The series includes variants in different packages such as SOT416, SOT883, and SOT323. The PDTA123JT specifically utilizes the SOT23 plastic surface-mounted package configuration.

Replacement Considerations

PDTC123JT is the NPN complement within the same family. Other series members include PDTA123JE, PDTA123JM, and PDTA123JU, which share similar electrical characteristics but differ in package type.

PDTA123JT-QRPDTA123JT-QR
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