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The PDTA123JT-QR is a PNP Resistor-Equipped Transistor (RET) in the SOT23 (TO-236AB) package. It integrates bias resistors R1 and R2 with a typical value of 2.2 kΩ and a ratio of 21. The device supports a collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA. It operates within a junction temperature range of -65 °C to +150 °C. The component features a DC current gain (hFE) of at least 100 at -10 mA and a transition frequency (fT) of 180 MHz. It is qualified under AEC-Q101 standards for automotive applications.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing origin. Confirm RoHS compliance status through the manufacturer's latest product data sheet or authorized distributor channels before finalizing procurement specifications.
Select this component when a compact PNP transistor solution with integrated base biasing is required. Ensure the -50 V collector-emitter voltage rating meets the circuit requirements. Verify that the SOT23 package dimensions align with the PCB footprint constraints and that the thermal resistance characteristics are sufficient for the expected power dissipation levels.
This part belongs to the PDTA123J series of PNP resistor-equipped transistors manufactured by Nexperia. The series includes variants in different packages such as SOT416, SOT883, and SOT323. The PDTA123JT specifically utilizes the SOT23 plastic surface-mounted package configuration.
PDTC123JT is the NPN complement within the same family. Other series members include PDTA123JE, PDTA123JM, and PDTA123JU, which share similar electrical characteristics but differ in package type.