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The PDTA123JT,215 is a PNP Resistor-Equipped Transistor (RET) in the SOT23 (TO-236AB) package. It integrates bias resistors R1 and R2 with an NPN transistor structure to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V and a continuous output current (IO) of -100 mA. The typical input bias resistor R1 is 2.2 kΩ, while the internal resistor ratio R2/R1 is typically 21. The device operates within a junction temperature range of -65 °C to +150 °C and features a total power dissipation of 250 mW at 25 °C ambient temperature.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging configuration and manufacturing origin. Ensure compatibility with reflow soldering processes as specified in the datasheet. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component when a compact PNP switching solution with integrated base biasing is required. The SOT23 package offers a small footprint suitable for space-constrained designs. Verify that the -50 V voltage rating and -100 mA current capability meet the specific load requirements of the target application circuit.
This component belongs to the PDTA123J series of PNP resistor-equipped transistors manufactured by Nexperia. The series includes variants in different packages such as SOT416, SOT883, and SOT323. The PDTA123JT specifically utilizes the SOT23 plastic surface-mounted package, providing a standardized form factor for general-purpose digital switching applications.
PDTC123JT