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The PDTA123JU,115 is a PNP Resistor-Equipped Transistor (RET) in the SOT323 (SC-70) surface-mounted package. It integrates bias resistors with a typical input resistance R1 of 2.2 kΩ and an output current capability of 100 mA. The collector-emitter voltage (VCEO) is rated at -50 V, and total power dissipation is 200 mW at 25 °C ambient temperature. The junction temperature range extends from -65 °C to +150 °C. This component is AEC-Q101 qualified for automotive applications.
Verify the specific ordering suffix
Select the PDTA123JU variant when a very small SOT323 footprint is required. Ensure the design accommodates the -50 V collector-emitter voltage limit and 200 mW power dissipation constraints. Verify that the integrated resistor values align with the target logic interface requirements before finalizing the schematic.
This device belongs to the PDTA123J series of PNP resistor-equipped transistors. Other members include the PDTA123JE (SOT416), PDTA123JM (SOT883), and PDTA123JT (SOT23). All variants share identical electrical characteristics but differ in physical package dimensions and thermal resistance profiles.
Direct functional substitutes within the same family include PDTA123JE, PDTA123JM, and PDTA123JT. For NPN polarity requirements, consider the PDTC123JU complement. Verify package compatibility and thermal performance when substituting across different package types.