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The PDTA123TE,115 is a PNP Resistor-Equipped Transistor (RET) from the PDTA123T series, manufactured by Nexperia. It integrates a single PNP transistor with a built-in input bias resistor (R1 = 2.2 kΩ typical) and an open base resistor (R2). The device is housed in the SOT416 (SC-75) plastic surface-mounted package with three leads. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a continuous output current (IO) of -100 mA, and a total power dissipation (Ptot) of 150 mW at 25 °C ambient temperature. The junction temperature maximum is 150 °C.
Verify the ordering suffix '115' corresponds to the specified tape and reel packing method for the SOT416 package. Confirm that the manufacturer designation aligns with current Nexperia product lines, as historical NXP documentation may reference legacy branding. Ensure the specific batch matches the required marking code '2A' for identification purposes during assembly.
Select this component when a compact PNP solution with integrated biasing is required for digital logic interfacing. The SOT416 package offers a small footprint suitable for space-constrained designs. Compare thermal resistance characteristics against other packages in the PDTA123T series if higher power dissipation capabilities are needed for the specific application environment.
This part belongs to the PDTA123T series of PNP Resistor-Equipped Transistors. It serves as the PNP complement to the PDTC123TE NPN variant. The series includes multiple package options such as SOT23, SOT323, and SOT883, allowing designers to choose form factors based on board space and manufacturing constraints while maintaining consistent electrical performance across the family.
Direct functional equivalents within the same series include the PDTC123TE for NPN applications. For different package requirements, consider PDTA123TT (SOT23) or PDTA123TU (SOT323), ensuring pinout compatibility is verified against the target schematic.