SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PDTA123TM,315 is a PNP Resistor-Equipped Transistor (RET) from the PDTA123T series, manufactured by Nexperia USA Inc. It integrates a single bias resistor R1 with a nominal value of 2.2 kΩ, while R2 remains open. The device is housed in an SOT883 package (DFN1006B-3), measuring 1.0 x 0.6 x 0.5 mm. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V and a maximum output current (IO) of -100 mA. The typical DC current gain (hFE) is 30 at IC = -20 mA and VCE = -5 V. Total power dissipation (Ptot) is rated at 250 mW at 25 °C ambient temperature.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing origin. Ensure compatibility with surface-mount reflow soldering processes as specified in the thermal characteristics section. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement specifications.
Select this component when a compact PNP digital transistor solution is required with a fixed 2.2 kΩ base input resistor. The SOT883 package is suitable for space-constrained designs. Verify that the -50 V collector-emitter voltage rating meets the circuit requirements. Consider the NPN complement PDTC123TM if complementary logic functionality is needed.
This part belongs to the PDTA123T series of PNP Resistor-Equipped Transistors. It shares functional similarities with other variants in the series but differs in physical package dimensions and pinout configuration. The SOT883 package provides a leadless ultra-small plastic footprint compared to standard SMD packages like SOT23 or SOT323.
PDTC123TM is the NPN complement within the same family. Other PDTA123T variants with different packages (e.g., PDTA123TE, PDTA123TU) offer identical electrical characteristics but require footprint adaptation.