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The PDTA123TMB,315 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a single base resistor (R1) of 2.2 kΩ within a compact DFN1006B-3 package. The device supports a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. Key electrical characteristics include a transition frequency (fT) of 230 MHz, a maximum DC current gain (hFE) of 30 at Ic=20mA and Vce=-5V, and a saturation voltage (Vce(sat)) of 150 mV at Ib=500µA and Ic=-10mA. The component is rated for a maximum power dissipation of 250 mW and features a collector cutoff current (Icbo) of 1 µA.
Verify the specific suffix '315' corresponds to the required tape and reel packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the DFN1006B-3 footprint matches the target PCB layout constraints. Validate that the 50 V rating meets the system's maximum operating voltage requirements.
Select this component when a PNP RET with integrated base resistance is required for space-constrained designs. The DFN1006B-3 package offers a smaller footprint compared to traditional SOT-23 packages. Consider the 2.2 kΩ internal resistance value for biasing calculations. Verify thermal management capabilities given the 250 mW power dissipation limit in the small outline package.
This part belongs to the PDTC/PDTA series of Resistor-Equipped Transistors from Nexperia. It serves as the PNP counterpart to NPN variants like the PDTC123 series. The family is designed to replace discrete transistor-resistor combinations, reducing assembly costs and board space. The TMB suffix indicates the specific lead-free and halogen-free compliant version within the DFN1006B-3 package type.
Publicly confirmed substitute part numbers are not available in the provided source material.