SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PDTA123TT,235 is a PNP Resistor-Equipped Transistor (RET) from the PDTA123T series, manufactured by Nexperia USA Inc. It integrates a single PNP transistor with a built-in input bias resistor R1 of 2.2 kΩ, while the second resistor R2 remains open. The device is housed in an SOT23 plastic surface-mounted package (TO-236AB). Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V and an output current capability (IO) of -100 mA. The total power dissipation (Ptot) is rated at 250 mW at an ambient temperature of 25 °C. The DC current gain (hFE) has a minimum value of 30 at IC = -20 mA and VCE = -5 V.
Verify the specific ordering suffix
Select the PDTA123TT when a PNP RET with a 2.2 kΩ base resistor is required in an SOT23 package. Ensure the application voltage does not exceed the -50 V collector-emitter rating. Consider the thermal resistance of 500 K/W for heat dissipation calculations. Verify that the open emitter-base configuration matches the circuit requirements, as no pull-down resistor is included internally.
The PDTA123TT belongs to the PDTA123T family of PNP Resistor-Equipped Transistors. It serves as the PNP counterpart to the PDTC123TT NPN RET. Both devices share similar electrical characteristics but differ in polarity. The series is designed to replace discrete resistor-transistor networks, offering a compact solution for logic interface and load switching tasks in space-constrained designs.
Direct functional substitutes within the same package include other PDTA123T variants with different resistor values, such as PDTA123ET or PDTA123JT, provided the internal resistor configurations match the circuit needs. Cross-family replacements like the BC857 series require external resistors and occupy more board space.