PDTA123TT,235

PDTA123TT,235

  • Description:TRANS PREBIAS PNP 50V TO236AB
  • Series:-

SKU:f361b9a96026 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V TO236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 20mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:-
  • Power - Max:250 mW
  • Grade:Automotive
  • Qualification:AEC-Q100
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB

Download product information

PDTA123TT,235

Overview

The PDTA123TT,235 is a PNP Resistor-Equipped Transistor (RET) from the PDTA123T series, manufactured by Nexperia USA Inc. It integrates a single PNP transistor with a built-in input bias resistor R1 of 2.2 kΩ, while the second resistor R2 remains open. The device is housed in an SOT23 plastic surface-mounted package (TO-236AB). Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V and an output current capability (IO) of -100 mA. The total power dissipation (Ptot) is rated at 250 mW at an ambient temperature of 25 °C. The DC current gain (hFE) has a minimum value of 30 at IC = -20 mA and VCE = -5 V.

Feature Summary

  • Integrates a PNP transistor with a built-in 2.2 kΩ input bias resistor to simplify circuit design.
  • Reduces component count and pick-and-place costs compared to discrete resistor-transistor combinations.
  • Provides 100 mA output current capability suitable for digital switching applications.

Applications

  • Digital applications in automotive and industrial segments
  • Cost-saving alternative for BC857 series in digital applications
  • Controlling IC inputs
  • Switching loads

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select the PDTA123TT when a PNP RET with a 2.2 kΩ base resistor is required in an SOT23 package. Ensure the application voltage does not exceed the -50 V collector-emitter rating. Consider the thermal resistance of 500 K/W for heat dissipation calculations. Verify that the open emitter-base configuration matches the circuit requirements, as no pull-down resistor is included internally.

Part Context

The PDTA123TT belongs to the PDTA123T family of PNP Resistor-Equipped Transistors. It serves as the PNP counterpart to the PDTC123TT NPN RET. Both devices share similar electrical characteristics but differ in polarity. The series is designed to replace discrete resistor-transistor networks, offering a compact solution for logic interface and load switching tasks in space-constrained designs.

Replacement Considerations

Direct functional substitutes within the same package include other PDTA123T variants with different resistor values, such as PDTA123ET or PDTA123JT, provided the internal resistor configurations match the circuit needs. Cross-family replacements like the BC857 series require external resistors and occupy more board space.

PDTA123TT,235PDTA123TT,235

Click on the inquiry