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The PDTA123TU,115 is a PNP Resistor-Equipped Transistor (RET) from the PDTA123T series, housed in an SOT323 (SC-70) surface-mounted package. It integrates a single bias resistor with a typical value of 2.2 kΩ at the input, while the second resistor remains open. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous output current (IO) of -100 mA. Key electrical characteristics include a DC current gain (hFE) of 30 to 400 at IC = -20 mA and VCE = -5 V, and a collector-emitter saturation voltage (VCEsat) of -150 mV max at IC = -10 mA. Total power dissipation is rated at 200 mW at 25 °C ambient temperature.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and manufacturing origin. The '-115' suffix indicates a tape and reel packing method with a standard quantity per reel. Ensure compatibility with reflow soldering processes as specified in the thermal characteristics section of the datasheet.
Select this component when a compact PNP solution with integrated base biasing is required for space-constrained designs. The SOT323 package offers a small footprint suitable for high-density PCB layouts. Consider the 2.2 kΩ input resistance value to ensure proper drive current requirements are met by the preceding logic stage without excessive loading.
This part belongs to the PDTA123T series of PNP resistor-equipped transistors. The NPN complement for this family is the PDTC123TU. The series includes variants in different packages such as SOT23, SOT416, and SOT883, allowing designers to choose form factors based on board space and thermal constraints while maintaining consistent electrical performance.
PDTC123TU is the NPN complement within the same product family. Designers requiring an NPN configuration should verify pinout compatibility if substituting directly in existing layouts, although the internal resistor topology differs.