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The PDTA123YE,115 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia. It integrates bias resistors to simplify circuit design and reduce component count. The device operates with a collector-emitter voltage of -50 V and a continuous DC output current of -100 mA. Internal resistance R1 has a typical value of 2.2 kΩ, while the R2/R1 ratio is typically 4.5. It is housed in the SOT416 (SC-75) plastic surface-mounted package with three leads. The junction temperature maximum is 150 °C, and the storage temperature range extends from -65 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packing method and reel specifications. Confirm that the SOT416 package variant matches the intended PCB footprint requirements. Ensure compliance with RoHS directives as indicated in the product data sheet before finalizing procurement orders.
Select this component when a PNP transistor configuration with integrated base biasing is required. The SOT416 package is suitable for surface-mount assembly processes. Verify that the internal resistor values align with the target logic levels and drive currents. Consider thermal dissipation limits relative to the ambient operating conditions of the final application.
This part belongs to the PDTA123Y series of PNP resistor-equipped transistors. The 'YE' designation specifically identifies the SOT416 (SC-75) surface-mount package variant. The '115' suffix denotes the standard tape and reel packaging format used for automated assembly. This series replaces discrete resistor networks with a single compact semiconductor device.
PDTC123YE is the NPN complement within the same series.