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The PDTA123YK,115 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia. It integrates a single PNP transistor with built-in bias resistors R1 and R2 in a SOT346 surface-mount package. The device features a collector-emitter voltage of -50 V and a continuous collector current of -100 mA. Typical resistor values are R1 = 2.2 kΩ and R2 = 10 kΩ, yielding a typical ratio of 4.5. Key electrical characteristics include a DC current gain (hFE) minimum of 35 at -5 mA, a saturation voltage of -150 mV at -10 mA, and an operating temperature range from -65 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging configuration and manufacturing origin. Confirm that the component status aligns with project requirements, as availability may vary across different distribution channels.
Select this component for designs requiring a compact PNP solution with integrated base biasing. Ensure the required input resistance matches the 2.2 kΩ specification and verify that the SOT346 package dimensions fit the available PCB footprint constraints.
This part belongs to the PDTA123Y series of NPN/PNP resistor-equipped transistors. The 'Y' designation indicates specific resistor ratios (R1=2.2kΩ, R2=10kΩ), while the 'K' suffix identifies the SOT346 plastic surface-mounted package variant.
PDTC123YK is the NPN complement within the same series. Other packages in the PDTA123Y family, such as PDTA123YT (SOT23) or PDTA123YU (SOT323), offer identical electrical performance but require different footprints.
The typical value for the input bias resistor R1 is 2.2 kΩ, and the typical value for the feedback bias resistor R2 is 10 kΩ.
Pin 1 is the input (base), Pin 2 is the GND (emitter), and Pin 3 is the output (collector).
The total power dissipation (Ptot) for the SOT346 package is 250 mW at an ambient temperature of 25 °C.