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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A 3DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：180 MHz
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q100
- Mounting Type：Surface Mount
- Package / Case：3-XFDFN
- Supplier Device Package：DFN1006B-3
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Overview
The PDTA123YMB is a PNP Resistor-Equipped Transistor (RET) housed in a leadless DFN1006B-3 (SOT883B) package with dimensions of 1.0 x 0.6 x 0.37 mm. It features an integrated bias resistor network consisting of R1 = 2.2 kΩ and R2 = 10 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA. Total power dissipation is rated at 250 mW, with a junction temperature limit of 150 °C. The component is AEC-Q101 qualified for automotive applications.
Feature Summary
- Integrates built-in bias resistors to simplify circuit design and reduce component count.
- Features a leadless ultra-small SMD plastic package with a low profile height of 0.37 mm.
- Qualified according to the AEC-Q101 standard for automotive electronics reliability.
Applications
- Low-current peripheral driver
- Control of IC inputs
- Replacement for general-purpose transistors in digital applications
- Mobile applications
Procurement Notes
Verify the specific ordering suffix '315' against official Nexperia documentation to confirm packaging details such as reel size or tape-and-reel specifications. Confirm that the DFN1006B-3 footprint matches the target PCB layout requirements. Ensure compliance with RoHS directives and check for any regional export control classifications applicable to this discrete semiconductor product before finalizing procurement orders.
Selection Notes
Select the PDTA123YMB when a compact PNP transistor solution with integrated biasing is required for space-constrained designs. The DFN1006B-3 package offers a significantly smaller footprint compared to traditional SOT23 packages. Consider the NPN complement PDTC123YMB if a complementary configuration is needed within the same series. Verify thermal management capabilities based on the specific ambient temperature conditions of the application environment.
Part Context
This component belongs to the PDTA123 series of PNP Resistor-Equipped Transistors manufactured by Nexperia. The series includes various variants differentiated by internal resistor values and package types, such as the SOT23 or SC-70. The PDTA123YMB specifically utilizes the DFN1006B-3 package to provide a low-profile solution suitable for modern surface-mount assembly processes.
Replacement Considerations
The NXP datasheet identifies the PDTC123YMB as the NPN complement. No other direct substitute part numbers are explicitly listed in the provided source material.
FAQ
What are the specific values of the built-in bias resistors?
The internal resistor network consists of R1 (input/base) at 2.2 kΩ and R2 (emitter) at 10 kΩ.
Is this component suitable for automotive applications?
Yes, the PDTA123YMB is qualified in accordance with the AEC-Q101 standard for discrete semiconductors.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) with an open base is -50 V.
