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Product Detailed Parameters
- Description：PDTA123YQB-Q/SOT8015/DFN1110D-
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA
- Frequency - Transition：180 MHz
- Power - Max：340 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XDFN Exposed Pad
- Supplier Device Package：DFN1110D-3
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Overview
The PDTA123YQB-Q is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an ultra-small DFN1110D-3 (SOT8015) leadless SMD package with side-wettable flanks. It features built-in bias resistors R1 (2.2 kΩ) and R2 (10 kΩ), providing a typical resistor ratio of 4.5. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA. Qualified under AEC-Q101 for automotive applications, it operates within a junction temperature range up to 150 °C and offers a low profile height of 0.5 mm.
Feature Summary
- Built-in bias resistors simplify circuit design and reduce component count
- Qualified according to AEC-Q101 for automotive applications
- Ultra-small DFN1110D-3 package with side-wettable flanks suitable for AOI
Applications
- Digital applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix and package variant when sourcing components. Confirm that the received parts match the DFN1110D-3 (SOT8015) footprint dimensions and pinout configuration. Ensure compliance with the stated AEC-Q101 qualification requirements if deploying in automotive environments. Check for any recent datasheet revisions or updates regarding manufacturing status.
Selection Notes
Select this component for designs requiring a compact PNP transistor solution with integrated biasing. The DFN1110D-3 package is ideal for space-constrained PCB layouts. Consider the -50 V voltage rating and 100 mA current capability against load requirements. Verify thermal management needs based on the specified power dissipation limits at various ambient temperatures.
Part Context
This part belongs to the PDTA123 series of PNP resistor-equipped transistors. It serves as the complement to the PDTC123YQB-Q NPN RET. The series is designed to replace discrete resistor-transistor networks, offering cost savings through reduced pick-and-place operations and simplified assembly processes in high-volume manufacturing.
Replacement Considerations
Direct replacements must match the DFN1110D-3 (SOT8015) package and electrical characteristics. Verify equivalent R1/R2 values and AEC-Q101 qualification if automotive use is required. Cross-reference pinouts to ensure compatibility with existing footprints.
