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The PDTA123YQB is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia, housed in an ultra-small DFN1110D-3 (SOT8015) leadless SMD plastic package with side-wettable flanks. It features built-in bias resistors R1 and R2 with typical values of 2.2 kΩ and 10 kΩ, respectively. The device supports a collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA. Key electrical characteristics include a DC current gain (hFE) of 35 at IC = -5 mA, a transition frequency (fT) of 180 MHz, and a total power dissipation of up to 420 mW on a 70 μm copper PCB. The junction temperature range extends from -65 °C to 150 °C.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and reel specifications. Confirm that the DFN1110D-3 footprint aligns with your PCB design guidelines, particularly regarding the side-wettable flank soldering requirements. Cross-reference the marking code 'QD' for visual identification during assembly inspection.
Select this component when a compact PNP transistor solution with integrated biasing is required for space-constrained designs. The DFN1110D-3 package offers a smaller footprint compared to traditional SOT packages while maintaining robust thermal performance. Ensure the application voltage does not exceed the -50 V collector-emitter rating and consider the 100 mA continuous current limit for load management.
This part belongs to Nexperia's resistor-equipped transistor family, designed to replace discrete resistor-transistor networks. It serves as a cost-saving alternative for general-purpose digital applications, offering simplified layout and reduced pick-and-place costs. The NPN complement for this device is the PDTC123YQB.
Direct replacements must match the DFN1110D-3 (SOT8015) package and electrical ratings. Verify pinout compatibility (Input, Ground, Output) before substitution. Other series members like PDTA123YM or PDTA123EU offer similar functionality but differ in package type and dimensions.