PDTA123YQBZ

PDTA123YQBZ

$0.03
  • Description:PDTA123YQB/SOT8015/DFN1110D-3
  • Series:-

SKU:f665affb88de Category: Brand:

  
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Product Detailed Parameters

  • Description:PDTA123YQB/SOT8015/DFN1110D-3
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA
  • Frequency - Transition:180 MHz
  • Power - Max:340 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:3-XDFN Exposed Pad
  • Supplier Device Package:DFN1110D-3

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PDTA123YQBZ

Overview

The PDTA123YQB is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia, housed in an ultra-small DFN1110D-3 (SOT8015) leadless SMD plastic package with side-wettable flanks. It features built-in bias resistors R1 and R2 with typical values of 2.2 kΩ and 10 kΩ, respectively. The device supports a collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA. Key electrical characteristics include a DC current gain (hFE) of 35 at IC = -5 mA, a transition frequency (fT) of 180 MHz, and a total power dissipation of up to 420 mW on a 70 μm copper PCB. The junction temperature range extends from -65 °C to 150 °C.

Feature Summary

  • Integrates built-in bias resistors to simplify circuit design and reduce component count.
  • Features a low profile package height of 0.5 mm suitable for high-density applications.
  • Designed for Automatic Optical Inspection (AOI) compatibility due to side-wettable flanks.

Applications

  • Digital switching applications
  • Controlling IC inputs
  • Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and reel specifications. Confirm that the DFN1110D-3 footprint aligns with your PCB design guidelines, particularly regarding the side-wettable flank soldering requirements. Cross-reference the marking code 'QD' for visual identification during assembly inspection.

Selection Notes

Select this component when a compact PNP transistor solution with integrated biasing is required for space-constrained designs. The DFN1110D-3 package offers a smaller footprint compared to traditional SOT packages while maintaining robust thermal performance. Ensure the application voltage does not exceed the -50 V collector-emitter rating and consider the 100 mA continuous current limit for load management.

Part Context

This part belongs to Nexperia's resistor-equipped transistor family, designed to replace discrete resistor-transistor networks. It serves as a cost-saving alternative for general-purpose digital applications, offering simplified layout and reduced pick-and-place costs. The NPN complement for this device is the PDTC123YQB.

Replacement Considerations

Direct replacements must match the DFN1110D-3 (SOT8015) package and electrical ratings. Verify pinout compatibility (Input, Ground, Output) before substitution. Other series members like PDTA123YM or PDTA123EU offer similar functionality but differ in package type and dimensions.

PDTA123YQBZPDTA123YQBZ
$0.03
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