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The PDTA123YT,215 is a PNP Resistor-Equipped Transistor (RET) from the PDTA123Y series, manufactured by Nexperia USA Inc. It integrates bias resistors to simplify circuit design and reduce component count. The device features a collector-emitter voltage (VCEO) of -50 V and a continuous DC output current (IO) of -100 mA. The typical input bias resistor R1 is 2.2 kΩ, with a bias resistor ratio (R2/R1) typically at 4.5. Total power dissipation (Ptot) is rated at 250 mW in the SOT23 package. Operating junction temperature ranges up to 150 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing origin. Ensure compatibility with surface mount assembly processes, as reflow soldering is the recommended method. Confirm that the selected variant meets all absolute maximum rating requirements for the intended application environment.
Select this component when a compact PNP transistor solution with integrated base and emitter biasing is required. The SOT23 package offers a small footprint suitable for space-constrained designs. Verify that the -100 mA current rating and -50 V voltage rating align with the load requirements. Consider thermal resistance characteristics if operating near ambient temperature limits.
This part belongs to the PDTA123Y series of PNP Resistor-Equipped Transistors. It serves as the complement to NPN variants within the same family. The 'YT' designation indicates the SOT23 surface-mount package. The ',215' suffix specifies the tape and reel packing quantity and method defined by the manufacturer.
Publicly confirmed substitute part numbers are not available in the provided source material.