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The PDTA124EQBZ is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an ultra-small DFN1110D-3 (SOT8015) leadless package with side-wettable flanks. It features built-in bias resistors R1 and R2, both nominally 22 kΩ. The device supports a collector-emitter voltage of -50 V and a maximum output current of -100 mA. Key electrical characteristics include a DC current gain (hFE) of at least 60 at -5 mA and -5 V, and a collector-emitter saturation voltage of no more than -100 mV at -10 mA. The package height is 0.5 mm, facilitating high-density surface-mount assembly.
Verify the specific suffix 'Z' against official Nexperia documentation to confirm tape-and-reel packaging specifications. Ensure the ordering code matches the exact resistance tolerance and marking code required for your production line. Cross-reference the SOT8015 footprint dimensions during PCB layout to guarantee compatibility with automated pick-and-place equipment.
Select this component when space constraints require an ultra-thin profile alongside integrated biasing. The 22 kΩ resistor values are suitable for standard logic-level driving currents. Consider the thermal resistance characteristics if operating near ambient temperature limits. Verify that the -50 V breakdown voltage meets the system's worst-case transient requirements.
This part belongs to the PDTA143/114/124/144EQB series, which shares the same DFN1110D-3 package but varies in internal resistor values. The PDTA124EQB variant specifically utilizes 22 kΩ resistors for both R1 and R2. It serves as the PNP counterpart to the PDTC124EQB NPN RET within the same family.
Direct functional substitutes within the same package include PDTA143EQB, PDTA114EQB, and PDTA144EQB, provided their respective resistor values align with the design requirements. Legacy replacements may include older SOT323 or SOT23 packages, though these will require footprint modifications.