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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V TO92-3
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Box (TB)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：500 mW
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
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Overview
The PDTA124ES is a PNP resistor-equipped transistor manufactured by NXP Semiconductors. It integrates two bias resistors, R1 and R2, both with a typical value of 22 kΩ, into a single silicon component. The device operates within a collector-emitter voltage (VCEO) limit of -50 V and supports a maximum DC output current (IO) of -100 mA. It is housed in the SOT54 package, which corresponds to the TO-92 form factor. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at an IC of -5 mA and a collector-emitter saturation voltage (VCEsat) of -150 mV under specified conditions.
Feature Summary
- Built-in bias resistors simplify circuit design
- Reduction of component count
- Reduced pick and place costs
Applications
- General purpose switching and amplification
- Inverter and interface circuits
- Circuit driver
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm the exact package type and manufacturing origin. Ensure that the selected variant matches the required thermal resistance and pin configuration for the intended PCB layout. Cross-reference the datasheet revision date to guarantee compliance with current product specifications before finalizing procurement orders.
Selection Notes
Select this component when a compact PNP solution with integrated base biasing is required for general-purpose applications. The SOT54 package is suitable for through-hole mounting. Evaluate the thermal resistance of 250 K/W and the 500 mW power dissipation capability to ensure adequate heat management under operating conditions. Confirm compatibility with the target logic levels based on the input-off and input-on voltage specifications.
Part Context
The PDTA124ES belongs to the PDTA124E series of PNP resistor-equipped transistors produced by NXP Semiconductors. This series consolidates discrete transistor and resistor functions to streamline assembly processes. The ES designation specifically identifies the SOT54 (TO-92) package variant within the broader family, which also includes surface-mount options like SOT23 and SOT323.
Replacement Considerations
Direct substitutes within the same series include PDTA124EK (SOT346), PDTA124ET (SOT23), and PDTA124EU (SOT323). These alternatives share identical electrical parameters but differ in physical package dimensions and pinout configurations. Verify mechanical fit and soldering requirements before substituting.
